Active and preferred
RoHS Compliant

IQDH29NE2LM5SC

OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on)
Data Sheet
package
ea.
in stock

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IQDH29NE2LM5SC
IQDH29NE2LM5SC
ea.
Data Sheet

Product details

  • ID (@25°C) max
    789 A
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    PQFN 5x6 Source-Down
  • Polarity
    N
  • QG (typ @4.5V)
    88 nC
  • QG (typ @10V)
    191 nC
  • RDS (on) (@10V) max
    0.29 mΩ
  • RDS (on) (@4.5V) max
    0.35 mΩ
  • VDS max
    25 V
  • VGS(th)
    1.6 V
Recommended
OPN
IQDH29NE2LM5SCATMA1
Product Status active and preferred
Infineon Package
PG-WHSON-8
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-WHSON-8
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The power MOSFET IQDH29NE2LM5SC comes with industry’s lowest RDS(ON) of 0,29 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.

Features

  • Cutting-edge 25 V silicon technology
  • Outstanding FOMs
  • Improved thermal performance
  • Ultra-low parasitics
  • Maximized chip/package ratio

Benefits

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Lowest RDS(on) on a 5x6 footprint
  • Improved thermal performance
  • Easy thermal management
  • Best switching performance
  • Industry-standard package

Documents

Documents

Design resources

Partner solutions

Developer community

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