IPB057N15NM6
Active and preferred
RoHS Compliant

IPB057N15NM6

OptiMOS™ 6 power MOSFET 150 V normal level in D²PAK 3-pin package
Datasheet
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IPB057N15NM6
IPB057N15NM6
Datasheet


Product details

  • ID (@25°C) max
    128 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    D2PAK (TO-263)
  • Polarity
    N
  • QG (typ @10V)
    44 nC
  • RDS (on) (@10V) max
    5.7 mΩ
  • VDS max
    150 V
  • VGS(th) range
    3 V to 4 V
  • VGS(th)
    3.5 V

Recommended
OPN
IPB057N15NM6ATMA1
Product Status active and preferred
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
DE
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
MY
Country of Diffusion (CoD)
DE
IPB057N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.

Features

  • 20% lower FOMg than OptiMOS™ 5
  • Industry's lowest Qrr in 150 V
  • Improved diode softness vs OptiMOS™ 5
  • Tight Vgs(th) spread of +/-500 mV
  • High avalanche ruggedness
  • Max Tj of 175°C and MSL1

Benefits

  • Low conduction and switching losses
  • Stable operation with improved EMI
  • Better current sharing when paralleling
  • Enhanced robustness
  • Improved system reliability
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