CY62128EV30LL-45ZXIT
Active and preferred
RoHS Compliant
Lead-free

CY62128EV30LL-45ZXIT

ea.
in stock

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CY62128EV30LL-45ZXIT
CY62128EV30LL-45ZXIT
ea.


Product details

  • Density
    1 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Ni/Pd/Au
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    128K x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    45 ns

OPN
CY62128EV30LL-45ZXIT
Product Status active and preferred
Infineon Package
Package Name TSOP-I-32 (51-85056)
Packing Size 1500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
PH, TW
Country of Diffusion (CoD)
US
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name TSOP-I-32 (51-85056)
Packing Size 1500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
PH, TW
Country of Diffusion (CoD)
US
ea.
in stock
CY62128EV30LL-45ZXIT is a 1-Mbit (128K × 8) CMOS asynchronous SRAM with 45 ns access time for 3 V-class embedded memory. It operates from 2.2 V to 3.6 V across the industrial range (–40°C to +85°C). The low-power core draws 1.3 mA typical at 1 MHz and 1 µA typical standby (4 µA max), with automatic power-down when deselected, high-Z outputs, and CE1/CE2/OE controls for simple memory expansion.

Features

  • 1-Mbit SRAM organized as 128K × 8
  • 45 ns read/write cycle time
  • 2.2 V to 3.6 V single-supply VCC
  • Automatic CE power-down (ISB1/2)
  • Standby current 1 µA typ, 4 µA max
  • Active current 1.3 mA typ at 1 MHz
  • Data retention at VCC = 1.5 V (VDR)
  • Data retention current 3 µA max
  • OE/WE tri-state control of I/O bus
  • 10 pF max input/output capacitance
  • ESD > 2001 V (MIL-STD-883 3015)
  • -40°C to +85°C operating ambient

Benefits

  • Fits small code/data storage needs
  • 45 ns enables fast memory accesses
  • 2.2–3.6 V works with 3 V rails
  • Power-down cuts idle consumption
  • µA standby extends battery life
  • Low active current reduces power
  • Retains data in backup mode
  • 3 µA max eases keepalive design
  • Tri-state bus simplifies expansion
  • Low capacitance helps signal integrity
  • ESD robustness reduces field fails
  • -40°C to +85°C boosts reliability
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