Infineon introduces RIC70115 radiation-hardened GaN HEMT driver for satellite and high-reliability space applications

Technology news

Jul 15, 2026

Munich, Germany – 15 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride (GaN) high-electron mobility transistor (HEMT) driver designed for satellite and high-reliability space applications where power conversion performance and long-term operational integrity are critical requirements. The RIC70115 supports both silicon (Si) and GaN MOSFET designs in low-side and high-side configurations, giving power system designers greater flexibility to adopt GaN-based power architectures in space platforms without compromising safe operation across varying bias voltage conditions. As the New Space economy continues to scale and satellite constellations grow in complexity and number, demand for rad hard power components that support the transition from silicon to GaN is increasing.

"GaN power solutions are becoming an integral part of the design ecosystem for New Space applications, and the pace of adoption is accelerating," said Mike Mills, Senior Vice President and General Manager HiRel at Infineon. "The RIC70115 reflects Infineon's commitment to delivering the integration, performance, and radiation hardness that space power designers need to move to GaN-based systems with confidence. We are giving designers a proven, qualified path to higher efficiency and greater design flexibility in one of the most demanding environments in the industry.”

The RIC70115 integrates an independent Miller Clamp function that prevents parasitic-induced turn-on while maintaining the desired switching speed, reducing switching losses and improving overall efficiency. A Truly Differential Input (TDI) logic stage delivers high noise immunity by rejecting common-mode noise and mitigating the effects of electromagnetic interference and radio frequency interference, both particularly relevant in the electrically demanding environment of a satellite power bus. An integrated low dropout regulator (LDO) generates a tightly regulated 4.8 V drive voltage from a 5 V or 12 V source, reducing the need for external regulation components and supporting a power input range of 4.75 V to 15 V. Together, these integrated functions reduce external component count, simplify circuit design, and improve system reliability in high-cycle space power applications.

The RIC70115 meets the requirements of MIL-PRF-38535 across an extended operating temperature range of -55°C to 125°C. It is radiation hardened to a Total Ionizing Dose (TID) rating of up to 100 krad (Si) and has been characterized for Single Event Effects (SEE) up to a Linear Energy Transfer (LET) of 81.9 MeV·cm²/mg, providing the radiation performance margins required for low-earth orbit and beyond.

Availability
The Infineon GaN HEMT driver RIC70115 is available today, along with the RIC70115EVAL1 evaluation board. For more information, visit: https://www.infineon.com/promo/ric70115

About Infineon

Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The Company had around 57,000 employees worldwide (end of September 2025) and generated revenue of about €14.7 billion in the 2025 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

 

Follow us: Facebook - LinkedIn

Press Photos

The Infineon RIC70115 supports both silicon and GaN MOSFET designs in low-side and high-side configurations, giving power system designers greater flexibility to adopt GaN-based power architectures in space platforms.

JPEG

2126x1098 px

Download
×
img-model

Information Number : inftn202607-122

avatar

Michael Burner

Spokesperson Consumer, Compute and Communication, PSS Division

+49 89 234 39300

Send email