Silicon Carbide MOSFET Discretes
Silicon carbide (SiC) CoolSiC™ MOSFET discretes ideally suited for hard- and resonant-switching topologies
CoolSiC™ SiC MOSFETs in discrete packages build on a state-of-the-art trench semiconductor process optimized to allow for both lowest losses in the application and highest reliability in operation. The temperature independent low switching losses and a fast, internal free-wheeling diode rated for hard commutation make the CoolSiC™ MOSFETs in discrete packages ideal for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects enables a benchmark low dynamic loss even at zero volt turn-off voltage in bridge topologies.
We complete our discrete offering with a range of selected driver IC products fulfilling the needs by the ultrafast SiC MOSFET switching feature. Together, CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of the technology: improved efficiency, space and weight savings, part count reduction, enhanced system reliability.
Silicon Carbide (SiC) Forum
The SiC web forum provides you with a platform for exchanging ideas with the community, asking our Silicon Carbide experts for advice and for sharing your experience with CoolSiC™ MOSFET modules and discretes.
CoolSiC™ MOSFETs in discrete housings come along with a fast internal freewheeling diode, thus making hard switching without additional diode chips possible. Due to its unipolar character, the MOSFETs show very low, temperature-independent switching and low conduction losses, especially under partial load conditions.
Our unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products in 1200V are ideally suited for hard- and resonant-switching topologies such as LLC and ZVS, and can be driven like an IGBT using standard drivers. These robust devices offer superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4V and short-circuit robustness.