600V CoolMOS™ PFD7
CoolMOS™ PFD7 high-voltage superjunction MOSFETs - the next level for ultrahigh power density designs
The 600V CoolMOS™ PFD7 high-voltage MOSFET series sets a new benchmark in 600V superjunction (SJ) technologies, dedicated to ultrahigh power density designs as well as low-power motor drives. The PFD7 high-voltage n-channel MOSFET series combines best-in-class performance with state-of-the-art ease of use, shaped by Infineon’s experience of more than 20 years in pioneering in superjunction technology innovation. The products come with an integrated fast body diode ensuring a robust device and in turn reduced BOM for the customer.
This product family offers up to 1.17 percent efficiency increase compared to the CoolMOS™ P7 technologies, which leads to a power density increase of 1.8 W/in3. CoolMOS™ PFD7 pushes the SJ MOSFET technology to new limits leading to outstanding improvement of lower conduction and charge/discharge losses as well as reduced turn-off and gate-driving losses.
A broad range of RDS(on) values in combination with a variety of packages helps in selecting the right part to optimize designs. Furthermore, an integrated ESD protection of up to 2kV eliminates ESD related yield loss. At the same time, especially our industry-leading SMD package offering contributes to bill-of-material and PCB space savings and simplifies manufacturing.
This unique set of product features and their resulting benefits, position the CoolMOS™ PFD7 superjunction MOSFET family exceptionally well for ultrahigh density applications like chargers and adapters, USB power delivery but also for low-power drives and specific lighting applications.