30V-250V N-Channel Power MOSFET Bare Die
OptiMOS™ and StrongIRFET™ low and medium voltage power MOSFET bare dies
Infineon’s OptiMOS™ and StrongIRFET™ 25V to 250V power MOSFET bare die families address a broad range of needs from low to high switching frequency applications.
OptiMOS™ bare dies combine very low on-state resistance (RDS(on)) and fastest switching behavior, providing outstanding performance to a wide range of industrial and consumer applications. StrongIRFET™ bare dies are optimized for low RDS(on) and high current capability and is ideally suited for low frequency applications requiring performance and ruggedness.
- Suitable for die bond: soldered or glued
- Backside metallization: NiV/ TiNiVAg/ TiNiAg system
- Frontside metallization: AICu system
- Passivation: nitride (only on edge structure)
For more information regarding StrongIRFET™ and OptiMOS™ power MOSFET bare die products, please contact the Infineon Service Center or your local Sales counterpart.