CoolSiC™ hybrid devices

Overview

Silicon Carbide (SiC) diodes and transistors are key components for modern and innovative power electronic

Use of a SiC diode in combination with a silicon IGBT allows to extend the capabilities of the IGBT technology reaching the next level efficiency with hybrid power switch devices. The CoolSiC™ Hybrid products create the price-performance bridge between pure Si-solution and high performance of entirely SiC MOSFET designs. 

  • CoolSiC™ hybrid discretes: Fast plug & play upgrade of available discrete designs to a higher efficiency, as a rule of thumb – 0.1% efficiency increase for each 10kHz – i.e. 0.23% efficiency increase for working frequency of 23kHz.
  • CoolSiC™ hybrid modules: Form the ideal bridge between purely Silicon-based and Silicon Carbide solutions. They combine IGBT chips with SiC diodes to further extend the capacity of the IGBT technology.

CoolSiC™ hybrid devices subcategories

Products
Highlights

Ultra low switching losses comparable to SiC MOSFET

The CoolSiC™ hybrid device co-packed with SiC diode significantly reduces switching losses at almost unchanged dv/dt and di/dt values. Ultra fast IGBTs in Kelvin-emitter 4-pin packages enable reduction of switching losses at the expense of higher dv/dt or di/dt values (and thus worse EMC). Fast switching S5 TRENCHSTOP™ 5 650 V IGBT or ultra fast switching H5  TRENCHSTOP™ 5 IGBT co-packed with free- wheeling Gen6 SiC diode in TO-247- 4pin package. In addition to the discrete portfolio we offer our best-in-class 12mm height baseplate-less Easy modules in which we use our latest TRENCHSTOP™ technology S7 and H5 co-packed with a CoolSiC™ Schottky Diode.

Key features Key benefits
Significant reduction of switching losses. SiC MOS-like efficiency Junction temperature reduction
Switching frequency increase
Cost-effective and "safer" alternative to SiC MOSFETs Competitve BOM while keeping high system efficiency
Plug-and-play preplacement of existing IGBT solutions Efficiency improvement of around 0.1% for each 10 kHz switching frequency

The CoolSiC™ hybrid modules form the ideal bridge between purely Silicon-based and Silicon Carbide solutions. They combine IGBT chips with SiC diodes to further extend the capacity of the IGBT technology. Compared to Silicon IGBT solutions, the turn-on losses can be reduced. In addition higher switching frequency and higher current handling capability can be realized.

650 V CoolSiC™ hybrid discretes are a combination of two established, best-in-class semiconductor technologies: TRENCHSTOP™ 5 IGBTs and CoolSiC™ Schottky diodes G6. This combination offers two main advantages over conventional duo-pack products with Silicon freewheeling diodes: drastically reduced switching losses and improved electromagnetic compatibility (EMC). Since CoolSiC™ hybrid discretes are based on a widely used TRENCHSTOP™ 5 technology, the design-in is straightforward: gate drivers, supplies and gate voltages can remain untouched.

Training

CoolSiC™ hybrid discretes – application

CoolSiC™ hybrid discretes have drastically reduced switching losses due to the anti-parallel silicon carbide diode. This training will explain what does this means for the application.

CoolSiC™ hybrid discretes– background & introduction

This training will introduce you to CoolSiC™ hybrid discretes. They are a combination of two best-in-class semiconductor technologies with proven track record.

Support