Overview

Use of a Schottky barrier diode as a freewheeling diode copacked with an IGBT allows to extend capabilities of IGBTs and enables significant reduction in Eon and overall switching losses. Freewheeling SiC Schottky barrier diodes significantly reduce switching losses at almost unchanged dV/dt and di/dt values.

Key features
  • TRENCHSTOP™ 5 IGBT technology
  • Copacked with SiC Schottky diode
  • 4pin Kelvin emitter package
  • Reduced voltage overshoots
Applications
Power conversion
Uninterruptible power supplies (UPS)
Photovoltaic

Products

About

About CoolSiC™ hybrid discretes

Fast and easy, plug-and-play replacement of our 650 V TRENCHSTOP™ 5 IGBT in designs instantly increases efficiency by 0.1% for each 10 kHz switching speed, meaning for an application with a switching speed of 23 kHz, the efficiency increase will be ~0.23%. Use of CoolSiC™ hybrid discretes in Kelvin emitter 4pin package may further reduce switching losses benefiting even higher efficiency gain.

Key features and advantages

650 V CoolSiC™ hybrid discretes combine key features of the best-in-class 650 V TRENCHSTOP™5 IGBT technology and the unipolar structure of copacked Schottky barrier CoolSiC™ diodes, e.g., the best-in-class ultra-fast or fast switching TRENCHSTOP™ 5 IGBT technology. They are copacked with SiC Schottky barrier diodes and have a 4pin Kelvin emitter package. Further advantages are that the 650 V CoolSiC™ hybrid discretes are best-in-class IGBTs with the least switching and conduction losses. They are comparable to SiC MOSFETs, are available at a competitive cost, and have an ultra-short IGBT response time due to sense pin and reduced voltage-overshoots (caused by dirr/dt of silicon diodes).

Key benefits

650 V CoolSiC™ hybrid discretes incorporate important key benefits, e.g., high efficiency for reduced cooling effort or for increased power density, higher frequency operations, bidirectional current flow, and easy replacement of designs with TRENCHSTOP™ 5 IGBT which enables a 0.1% efficiency gain for each 10 kHz operational frequency.

TO-247 4pin package with Kelvin emitter

TO-247 4pin packages with Kelvin emitter enables faster commutation, improving the switching behavior of IGBT. Dynamic losses are reduced by 20% in comparison to standard TO-247 packages, thus increasing the overall system efficiency and enabling the IGBTs to operate at lower temperature.

The faster the IGBT is able to switch, the bigger the benefit from TO-247 4pin becomes.

TO-247 4pin

About CoolSiC™ hybrid discretes

Fast and easy, plug-and-play replacement of our 650 V TRENCHSTOP™ 5 IGBT in designs instantly increases efficiency by 0.1% for each 10 kHz switching speed, meaning for an application with a switching speed of 23 kHz, the efficiency increase will be ~0.23%. Use of CoolSiC™ hybrid discretes in Kelvin emitter 4pin package may further reduce switching losses benefiting even higher efficiency gain.

Key features and advantages

650 V CoolSiC™ hybrid discretes combine key features of the best-in-class 650 V TRENCHSTOP™5 IGBT technology and the unipolar structure of copacked Schottky barrier CoolSiC™ diodes, e.g., the best-in-class ultra-fast or fast switching TRENCHSTOP™ 5 IGBT technology. They are copacked with SiC Schottky barrier diodes and have a 4pin Kelvin emitter package. Further advantages are that the 650 V CoolSiC™ hybrid discretes are best-in-class IGBTs with the least switching and conduction losses. They are comparable to SiC MOSFETs, are available at a competitive cost, and have an ultra-short IGBT response time due to sense pin and reduced voltage-overshoots (caused by dirr/dt of silicon diodes).

Key benefits

650 V CoolSiC™ hybrid discretes incorporate important key benefits, e.g., high efficiency for reduced cooling effort or for increased power density, higher frequency operations, bidirectional current flow, and easy replacement of designs with TRENCHSTOP™ 5 IGBT which enables a 0.1% efficiency gain for each 10 kHz operational frequency.

TO-247 4pin package with Kelvin emitter

TO-247 4pin packages with Kelvin emitter enables faster commutation, improving the switching behavior of IGBT. Dynamic losses are reduced by 20% in comparison to standard TO-247 packages, thus increasing the overall system efficiency and enabling the IGBTs to operate at lower temperature.

The faster the IGBT is able to switch, the bigger the benefit from TO-247 4pin becomes.

TO-247 4pin

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