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CoolSiC™ hybrid devices

The use of a SiC diode in combination with a silicon IGBT allows the extension of IGBT technology's capabilities to the next level of efficiency with hybrid power switch devices. The CoolSiC™ hybrid products create the price-performance bridge between pure Si-solution and the high performance of entirely SiC MOSFET designs. 

CoolSiC™ hybrid discretes: Fast plug & play upgrade of available discrete designs to higher efficiency, as a rule of thumb – 0.1% efficiency increase for each 10 kHz – e.g., 0.23% efficiency increase for 23 kHz working frequency .

CoolSiC™ hybrid modules: Form the ideal bridge between purely silicon-based and silicon carbide solutions. They combine IGBT chips with SiC diodes to further extend the capacity of the IGBT technology.

Ultra-low switching losses comparable to SiC MOSFET

The CoolSiC™ hybrid device copacked with SiC diode significantly reduces switching losses at almost unchanged dV/dt and di/dt values. Ultra-fast IGBTs in Kelvin-emitter 4pin packages enable the reduction of switching losses at the expense of higher dV/dt or di/dt values (and thus worse EMC). Fast switching S5 TRENCHSTOP™ 5 650 V IGBT or ultra-fast-switching H5 TRENCHSTOP™ 5 IGBT is copacked with free-wheeling Gen6 SiC diode in TO-247 4pin package. In addition to the discrete portfolio, we offer our best-in-class 12 mm height baseplate-less easy modules in which we use our latest TRENCHSTOP™ technology S7 and H5 copacked with a CoolSiC™ Schottky diode.

Key features and key benefits

The CoolSiC™ hybrid devices incorporate key features such as a significant reduction of switching losses, and provide SiC MOS-like efficiency, cost-effective and "safer" alternative to SiC MOSFETs, and plug-and-play replacement of existing IGBT solutions.

The key features are, among others: junction temperature reduction, switching frequency increase, competitive BOM while keeping high system efficiency, and efficiency improvement of ca. 0.1% for each 10 kHz of switching frequency.

CoolSiC™ hybrid devices

The use of a SiC diode in combination with a silicon IGBT allows the extension of IGBT technology's capabilities to the next level of efficiency with hybrid power switch devices. The CoolSiC™ hybrid products create the price-performance bridge between pure Si-solution and the high performance of entirely SiC MOSFET designs. 

CoolSiC™ hybrid discretes: Fast plug & play upgrade of available discrete designs to higher efficiency, as a rule of thumb – 0.1% efficiency increase for each 10 kHz – e.g., 0.23% efficiency increase for 23 kHz working frequency .

CoolSiC™ hybrid modules: Form the ideal bridge between purely silicon-based and silicon carbide solutions. They combine IGBT chips with SiC diodes to further extend the capacity of the IGBT technology.

Ultra-low switching losses comparable to SiC MOSFET

The CoolSiC™ hybrid device copacked with SiC diode significantly reduces switching losses at almost unchanged dV/dt and di/dt values. Ultra-fast IGBTs in Kelvin-emitter 4pin packages enable the reduction of switching losses at the expense of higher dV/dt or di/dt values (and thus worse EMC). Fast switching S5 TRENCHSTOP™ 5 650 V IGBT or ultra-fast-switching H5 TRENCHSTOP™ 5 IGBT is copacked with free-wheeling Gen6 SiC diode in TO-247 4pin package. In addition to the discrete portfolio, we offer our best-in-class 12 mm height baseplate-less easy modules in which we use our latest TRENCHSTOP™ technology S7 and H5 copacked with a CoolSiC™ Schottky diode.

Key features and key benefits

The CoolSiC™ hybrid devices incorporate key features such as a significant reduction of switching losses, and provide SiC MOS-like efficiency, cost-effective and "safer" alternative to SiC MOSFETs, and plug-and-play replacement of existing IGBT solutions.

The key features are, among others: junction temperature reduction, switching frequency increase, competitive BOM while keeping high system efficiency, and efficiency improvement of ca. 0.1% for each 10 kHz of switching frequency.

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