Silicon Carbide MOSFET Discretes
650 V, 1200 V, and 1700 V CoolSiC™ MOSFET discretes ideally suited for hard- and resonant-switching topologies
Our CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both lowest losses in the application and highest reliability in operation. The discrete CoolSiC™ portfolio in TO- and SMD-housings comes in 650 V, 1200 V and 1700 V voltages classes, with on-resistance ratings from 27 mΩ up to 1000 mΩ. CoolSiC™ trench technology enables a flexible parameter-set, which is used for implementation of application-specific features in respective product portfolios, e.g.: gate-source voltages, avalanche specification, short-circuit capability or internal body diode rated for hard commutation.
CoolSiC™ MOSFETs in discrete packages are ideally suited for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects creates a benchmark in low dynamic loss, even at zero volt turn-off voltage in bridge topologies. Our TO- and SMD offering comes also with Kelvin-source pins for optimized switching performance.
We complete the SiC discrete offering with a range of selected driver IC products fulfilling the needs of the ultrafast SiC MOSFET switching feature. Together, CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of SiC technology: improved efficiency, space and weight savings, part count reduction, enhanced system reliability.
CoolSiC™ MOSFETs in discrete housings come along with a fast internal freewheeling diode, thus making hard switching without additional diode chips possible. Due to its unipolar character, the MOSFETs show very low, temperature-independent switching and low conduction losses, especially under partial load conditions.
Our unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products in 1200 V and 650 V are ideally suited for hard- and resonant-switching topologies such as LLC and ZVS, and can be driven like an IGBT or CoolMOS™, using standard drivers. These robust devices offer superior gate oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V and short-circuit robustness.
Silicon Carbide (SiC) Forum
The SiC web forum provides you with a platform for exchanging ideas with the community, asking our Silicon Carbide experts for advice and for sharing your experience with CoolSiC™ MOSFET modules and discretes.
SiC MOSFET 650 V and 1200 V Gate Driver ICs
Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.