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TRENCHSTOP™ Advanced Isolation represents the cutting-edge technology in isolated packages. Thirty-five percent lower thermal resistance Rth(j-h) of advanced isolation material compared to high-grade Iso-foil enables effective and reliable thermal path from chip to the heatsink. 

The extensive 600 V/1200 V TRENCHSTOP™ IGBT7 S7 portfolio represents the superior option for all industrial applications requiring short-circuit protection capability/ruggedness. The IGBT7 with its superior controllability and short-circuit ruggedness represents the benchmark among SC devices thanks to superior electrical performance, higher controllability, easy EMI design, and higher reliability in applications in harsh conditions (HV-H3TRB and cosmic ray robustness).

Highest efficiency at medium speed switching from 10 kHz to 40 kHz with 50 A and 75 A S5 650 V TRENCHSTOP™5 IGBT in TO-247 4pin Kelvin emitter package.

Bigger active chip area of the TO-247PLUS package can accommodate up to 75 A IGBT with 75 A diode in TO-247 footprint. Higher power density of TO-247PLUS can be used to reduce paralleling, increase system power density, or system power output.

The 4th pin known as Kelvin emitter terminal bypasses the emitter lead inductance on the gate control loop, enhancing the IGBT’s switching speed and decreasing the switching energy.

TRENCHSTOP™ Advanced Isolation represents the cutting-edge technology in isolated packages. Thirty-five percent lower thermal resistance Rth(j-h) of advanced isolation material compared to high-grade Iso-foil enables effective and reliable thermal path from chip to the heatsink. 

The extensive 600 V/1200 V TRENCHSTOP™ IGBT7 S7 portfolio represents the superior option for all industrial applications requiring short-circuit protection capability/ruggedness. The IGBT7 with its superior controllability and short-circuit ruggedness represents the benchmark among SC devices thanks to superior electrical performance, higher controllability, easy EMI design, and higher reliability in applications in harsh conditions (HV-H3TRB and cosmic ray robustness).

Highest efficiency at medium speed switching from 10 kHz to 40 kHz with 50 A and 75 A S5 650 V TRENCHSTOP™5 IGBT in TO-247 4pin Kelvin emitter package.

Bigger active chip area of the TO-247PLUS package can accommodate up to 75 A IGBT with 75 A diode in TO-247 footprint. Higher power density of TO-247PLUS can be used to reduce paralleling, increase system power density, or system power output.

The 4th pin known as Kelvin emitter terminal bypasses the emitter lead inductance on the gate control loop, enhancing the IGBT’s switching speed and decreasing the switching energy.

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