Overview

Our TRENCHSTOP™ IGBT technology due to the combination of trench top-cell and field-stop concept leads to significant improvement of static as well as dynamic performance of the device. The combination of IGBT with soft recovery Emitter Controlled-Diode (ECD) further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Products

About

Features of 600 V and 1200 V TRENCHSTOP™ 

600 V and 1200 V TRENCHSTOP™ IGBTs incorporates important key features, such as lowest Vce(sat) drop for lower conduction losses, low switching losses, easy parallel switching capability due to positive temperature coefficient in Vce(sat), very soft, fast recovery anti-parallel Emitter Controlled-Diode, high ruggedness, temperature stable behavior, low EMI emissions, low gate charge, and very tight parameter distribution.

Benefits of 600 V and 1200 V TRENCHSTOP™

The key benefits of 600 V and 1200 V TRENCHSTOP™ IGBTs are, among others, highest efficiency with low conduction and switching losses, comprehensive portfolio in 600 V and 1200 V for flexibility of design, and high device reliability.

Details about 600 V TRENCHSTOP™ Performance IGBT

The 600 V TRENCHSTOP™ Performance series is an IGBT, combining the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior. It enables higher efficiency in motor control, air conditioning compressors, HVAC motor drives, UPS, solar power converters, and all power conversion applications working up to 30 kHz in hard-switching topologies. 600 V TRENCHSTOP™ Performance is a medium-speed switching IGBT with 5 µs short-circuit capability offering better performance with lower switching losses, lower diode recovery losses, low-speed dV/dt switching (<5 V/ns), easy design, 5 µs short-circuit rating, low EMI, and cost competitive.

Benefits of 600 V TRENCHSTOP™ Performance IGBT

The TRENCHSTOP™ Performance offers lower total switching losses (Ets) i.e., better efficiency IGBT, 7% lower Ets for switching speed of 8 kHz, 11% lower Ets for switching speed of 15 kHz, low-speed dV/dt switching (<5 V/ns)and improved cell design for higher reliability.

Features of 600 V and 1200 V TRENCHSTOP™ 

600 V and 1200 V TRENCHSTOP™ IGBTs incorporates important key features, such as lowest Vce(sat) drop for lower conduction losses, low switching losses, easy parallel switching capability due to positive temperature coefficient in Vce(sat), very soft, fast recovery anti-parallel Emitter Controlled-Diode, high ruggedness, temperature stable behavior, low EMI emissions, low gate charge, and very tight parameter distribution.

Benefits of 600 V and 1200 V TRENCHSTOP™

The key benefits of 600 V and 1200 V TRENCHSTOP™ IGBTs are, among others, highest efficiency with low conduction and switching losses, comprehensive portfolio in 600 V and 1200 V for flexibility of design, and high device reliability.

Details about 600 V TRENCHSTOP™ Performance IGBT

The 600 V TRENCHSTOP™ Performance series is an IGBT, combining the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior. It enables higher efficiency in motor control, air conditioning compressors, HVAC motor drives, UPS, solar power converters, and all power conversion applications working up to 30 kHz in hard-switching topologies. 600 V TRENCHSTOP™ Performance is a medium-speed switching IGBT with 5 µs short-circuit capability offering better performance with lower switching losses, lower diode recovery losses, low-speed dV/dt switching (<5 V/ns), easy design, 5 µs short-circuit rating, low EMI, and cost competitive.

Benefits of 600 V TRENCHSTOP™ Performance IGBT

The TRENCHSTOP™ Performance offers lower total switching losses (Ets) i.e., better efficiency IGBT, 7% lower Ets for switching speed of 8 kHz, 11% lower Ets for switching speed of 15 kHz, low-speed dV/dt switching (<5 V/ns)and improved cell design for higher reliability.

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