Overview

Highest current density up to 75 A, 1200 V IGBT or 120 A, 600 V IGBT co-packed with a diode in TO-247 footprint, 20 percent lower Rth(jh), 15 percent better heat dissipation, and fast clip assembly.

Key features
  • Fast clip assembly
  • Higher current density
  • Easy upgrade of the existing design
  • Improved system thermal management

Products

About

1200 V - reducing the number of power switches in parallel

Due to a bigger active chip area, the new TO-247PLUS package can accommodate a 75 A IGBT with a 75 A diode. Three pieces of 25 A in TO-247-3 can be replaced by one piece of 75 A in TO-247PLUS. Less paralleling (at the same IC) benefits easier IGBT control, higher system reliability, more compact design, and lower bill of materials (BOM).

1200 V - easy upgrade of available designs for higher power output

A higher current density of the TO-247PLUS-3 allows a one-to-one replacement of a 40 A IGBT, with a 75 A IGBT, keeping the same footprint and thermal conditions. Infineon's internal lab test showed a Pout increase of 40 percent—replacing the B6 Drive topology, a 40 A IGBT in TO-247-3—with a 75 A IGBT in TO-247PLUS. An easy upgrade of the existing design for higher power is possible (IC increase). With little re-design efforts, low R&D costs, and fast re-design time. 

1200 V - improved system thermal management Tj and Tc reduction

A 35 percent bigger backside thermal pad area of the TO-247PLUS package results in a 20 percent lower Rth of the package and contributes to 15 percent better heat dissipation. Replacing a 40 A IGBT in TO-247-3 with the same current 40 A IGBT but in TO-247PLUS package allows to reduce junction temperature Tj (at the same IC). A lower junction temperature Tj reduces thermal stress on the IGBT and allows the use of a smaller heatsink or less powerful cooling fan leading to smaller system dimensions at a lower BOM.

Maximize the flexibility of your design with the TO-247PLUS package.

600 V - advantages of IGBTs in TO-247PLUS

What are the advantages of 100 A and 120 A IGBT co-packed with full-rated diode in JEDEC standard TO-247PLUS?: The advantages are multiple, depending on the need—power output or power density increase, size and cost reduction, better thermal performance, higher reliability, and longer lifetime.

Easy upgrade of the available designs for higher power output: One-to-one replacement of 75 A IGBT with 120 A device allows up to 40 percent power output increase while keeping the same footprint and thermal conditions.

Increased system power density, reducing the PCB footprint and the cost: Keeping nominal current IC in the system the same, three pieces of 75 A IGBT in TO-247 can be replaced with two pieces of 120 A IGBT in TO-247PLUS.

Improved thermal conditions for higher reliability and longer lifetime of the IGBT: 35 percent bigger thermal pad area of TO-247PLUS contributes to 10 percent-15 percent better heat dissipation allowing lower junction temperature Tj. 

Maximize the flexibility of your design with TRENCHSTOP™ in the TO-247PLUS package.

1200 V - reducing the number of power switches in parallel

Due to a bigger active chip area, the new TO-247PLUS package can accommodate a 75 A IGBT with a 75 A diode. Three pieces of 25 A in TO-247-3 can be replaced by one piece of 75 A in TO-247PLUS. Less paralleling (at the same IC) benefits easier IGBT control, higher system reliability, more compact design, and lower bill of materials (BOM).

1200 V - easy upgrade of available designs for higher power output

A higher current density of the TO-247PLUS-3 allows a one-to-one replacement of a 40 A IGBT, with a 75 A IGBT, keeping the same footprint and thermal conditions. Infineon's internal lab test showed a Pout increase of 40 percent—replacing the B6 Drive topology, a 40 A IGBT in TO-247-3—with a 75 A IGBT in TO-247PLUS. An easy upgrade of the existing design for higher power is possible (IC increase). With little re-design efforts, low R&D costs, and fast re-design time. 

1200 V - improved system thermal management Tj and Tc reduction

A 35 percent bigger backside thermal pad area of the TO-247PLUS package results in a 20 percent lower Rth of the package and contributes to 15 percent better heat dissipation. Replacing a 40 A IGBT in TO-247-3 with the same current 40 A IGBT but in TO-247PLUS package allows to reduce junction temperature Tj (at the same IC). A lower junction temperature Tj reduces thermal stress on the IGBT and allows the use of a smaller heatsink or less powerful cooling fan leading to smaller system dimensions at a lower BOM.

Maximize the flexibility of your design with the TO-247PLUS package.

600 V - advantages of IGBTs in TO-247PLUS

What are the advantages of 100 A and 120 A IGBT co-packed with full-rated diode in JEDEC standard TO-247PLUS?: The advantages are multiple, depending on the need—power output or power density increase, size and cost reduction, better thermal performance, higher reliability, and longer lifetime.

Easy upgrade of the available designs for higher power output: One-to-one replacement of 75 A IGBT with 120 A device allows up to 40 percent power output increase while keeping the same footprint and thermal conditions.

Increased system power density, reducing the PCB footprint and the cost: Keeping nominal current IC in the system the same, three pieces of 75 A IGBT in TO-247 can be replaced with two pieces of 120 A IGBT in TO-247PLUS.

Improved thermal conditions for higher reliability and longer lifetime of the IGBT: 35 percent bigger thermal pad area of TO-247PLUS contributes to 10 percent-15 percent better heat dissipation allowing lower junction temperature Tj. 

Maximize the flexibility of your design with TRENCHSTOP™ in the TO-247PLUS package.

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