IRHY55130CM

Data Sheet

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IRHY55130CM
IRHY55130CM
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 1C
  • Generation
    R5
  • ID (@100°C) max
    14 A
  • ID (@25°C) max
    18 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300 500
  • Package
    TO-257AA
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    50 nC
  • QPL Part Number
    2N7484T3
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    85 mΩ
  • TID max
    500 Krad(Si)
  • VBRDSS min
    100 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHY55130CM R5 N-channel MOSFET is a rad hard device with 100V and 18A capacity. Housed in a TO-257AA package, the electrical performance of this COTS device is up to 500krad(Si) TID. Low RDS(on) and gate charge reduce power losses resulting in high performance and reliability in space applications. Switching applications, such as DC-DC converters and motor control, benefit from low losses.

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }