Strengthening the link between the real and the digital worldFF11MR12W1M1_B70
Overview
Half-bridge 1200 V CoolSiC™ MOSFET Module
EasyDUAL™ 1B 1200 V, 11 mΩ half-bridge module with CoolSiC™ MOSFET, NTC, PressFIT Contact Technology and aluminium nitride ceramic.
New generation M1H product FF8MR12W1M1H_B70 coming soon.
Summary of Features
- High performance aluminum nitride ceramic
- 1200 V CoolSiC™ trench MOSFET technology
- Best-in-class Easy module package
- Half-bridge configuration
- PressFIT Technology
Benefits
- Better thermal conductivity of DCB material - RthJH improvement by 40% possible
- Power density and compact design
- Superior gate-oxide reliability of CoolSiC™ MOSFET
- Minimization of cavity between module and heat sink
- High degree of freedem for the inverter designer
- Longer lifetime and less cooling effort
Diagrams
Simulation
Training
Support
