Silicon Carbide CoolSiC™ MOSFET Modules
CoolSiC™ MOSFET module technology in different packages and topologies
Infineon’s range of CoolSiC™ MOSFET power modules open up new opportunities for inverter designers to realize never-before-seen levels of efficiency and power density. When Silicon Carbide (SiC) semiconductors are used as switches, the overall system efficiency is improved by allowing higher operating temperatures and switching frequencies while also supporting high. In addition, Silicon Carbide (SiC) power modules can be tailored to different application needs and are available in topologies from 45 mOhm to 2 mOhm RDS(on).
Our selection of CoolSiC™ Silicon Carbide MOSFET power modules are available in different configurations such as 3-level, half-bridge, fourpack, sixpack, or as booster, our 1200 V SiC MOSFET modules offer a superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses.
Not only can all EasyPACK™, EasyDUAL™, and 62mm CoolSiC™ MOSFET power modules be ordered with pre-applied Thermal Interface Material (TIM), but additional features can be offered as well. For example, our Easy modules with a high-performance aluminum nitride (AlN) ceramic significantly improve the thermal performance of RthJH.
SiC MOSFET 650 V and 1200 V Gate Driver ICs
Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
Learn about the motivation behind paralleling SiC MOSFET modules, what are the key challenges and solutions for both gate driver and power layout design and get familiar with optimized system loop inductance to minimize switching losses.
Recognize the motivation behind paralleling of the SiC MOSFET modules, as well as key challenges and solutions for both gate driver and power layout design. Learn about optimized system loop inductance to minimize switching losses solution.
Get know recent trends in 1500 Volt PV system, challenges and technical and gain educated comprehensive solution for the 1500 Volt PV market.
- Distinguish the features and benefits of Infineon’s CoolSiC™ solutions in target applications and identify Infineon’s fully scalable CoolSiC™ portfolio to meet this automotive market transition
- Explain the reasons for the increasing introduction of silicon carbide technology in the automotive applications