950 V/1200 V TRENCHSTOP™ IGBT7 - Higher power density and optimized switching
The 950 V/1200 V TRENCHSTOP™ IGBT7 and EC7 diode technology is based on latest micro-pattern trenches technology which provide strongly reduced losses and offer a high level of controllability. This cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to the formerly used square trench cells. The chip is specially optimized for industrial drives applications and solar energy systems, which means much lower static losses, higher power density and softer switching. Additionally, by raising the allowed maximum operation temperature up to 175 °C at overload in the power module, a significant increase of power density can be obtained.
The developed chipset consisting of IGBT 7 and emitter-controlled 7-diode is optimized to meet all requirements of an inverterized general-purpose drive (GPD).
Good controllability, sufficient softness at all application-relevant current levels, a significant reduction in static losses, and a high short-circuit capability were achieved. In combination with the improvement of the EconoDUAL ™ 3 housing and the new temperature specifications to cover the overload requirements of the drives, the inverter designer has a high degree of freedom
The application tests show impressive improved performance compared to the previous generation, by achieving 38 K lower temperature with the same current. Alternatively, an output current that is up to 150 A higher can be realized. Taking into account the typical GPD criteria for normal and hard-wearing design, a frame size jump from 370 A to 477 A is possible with the EconoDUAL ™ 3 housing with IGBT 7 instead of IGBT 4 Inverterized
EconoDUAL™ 3 with TRENCHSTOP™ IGBT7
System simplification and reduced costs by highest power density and performance
EconoDUAL™ 3 modules are now available with the latest TRENCHSTOP™ IGBT7 generation, extending the 1200 V portfolio from 600 A up to 900 A. The 900 A 1200 V EconoDUAL™ features an improved housing for handling higher currents, and temperatures within the same footprint.
In combination with the TRENCHSTOP™ IGBT7 technology, it shows a significant reduction of losses, a high level of controllability and switching softness, as well as high short-circuit capability. Together with the maximum operation temperature of 175°C at overload, high efficiency and power density are achieved, enabling system simplification and cost reduction.
Our Easy 1B and Easy 2B family are now fully equipped with the brand-new TRENCHSTOP™ IGBT7 technology, which provides higher power density, greatly reduced losses, and offers a high level of controllability in drives applications. The new portfolio, which is tailored for industrial drives application, offers a complete solution up to 11 kW with PIM modules and up to 22 kW with six-pack modules for the inverter platform.
All the new TRENCHSTOP™ IGBT7 Easy modules are designed with the same pin-out as the former generation, TRENCHSTOP™ IGBT4 modules. Thus, the design cycle and the design efforts of the new inverter platform will be reduced.
Easy Power Modules with TRENCHSTOP™ IGBT7
Our Easy 3B package is now equipped with the brand-new 950V TRENCHSTOP™ IGBT7 S7 and L7 technology, which is optimized for 1500V PV string inverter. The S7 chip is optimized for 16kHz switching frequency whereas the L7 is optimized for 50Hz/60Hz. Together this chipset can enable a string inverter design capable of more than 200kW and weight well below 100kg. We will offer both inverter and boost solution with this IGBT7 chipset.