Active and preferred
RoHS Compliant
Lead-free

S25FS064SAGMFB010

Data Sheet
package
software

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S25FS064SAGMFB010
S25FS064SAGMFB010
Data Sheet

Product details

  • Classification
    ISO 26262-ready
  • Density
    64 MBit
  • Family
    FS-S
  • Interface Bandwidth
    66 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 105 °C
  • Operating Voltage
    1.8 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Automotive
Recommended
OPN
S25FS064SAGMFB010
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (002-15548)
Packing Size 2800
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (002-15548)
Packing Size 2800
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S25FS064SAGMFB010 is a 64 Mb SPI NOR flash memory using Infineon's 65-nm MIRRORBIT™ technology and ECLIPSE architecture for fast program and erase. It supports single, dual, and quad SPI I/O, up to 133 MHz clock, and operates from 1.7 V to 2.0 V. With flexible sector options, 100,000 program-erase cycles, 20-year data retention, and advanced security features, it is qualified to AEC-Q100 Grade 1 for automotive, industrial, and embedded uses where reliability is critical.

Features

  • SPI with single, dual, quad, and QPI modes
  • Double data rate (DDR) read commands
  • 256/512-byte page programming buffer
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • 1024-byte OTP array with lockable regions
  • Automatic ECC with single bit error
  • Advanced sector and block protection
  • 65-nm MIRRORBIT™ technology
  • 1.7 V to 2.0 V supply voltage
  • Operating temperature up to +125°C

Benefits

  • Flexible I/O enables high-speed data access
  • DDR read boosts system performance
  • Large buffer accelerates programming
  • Multiple erase modes fit various needs
  • High endurance for reliable operation
  • Long retention secures critical data
  • OTP array supports secure device ID
  • ECC improves data integrity
  • Robust protection prevents data loss
  • Advanced process enables high density
  • Low voltage reduces power consumption
  • Wide temp range suits harsh environments

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }