not for new design

IRHNM593110

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
Data Sheet
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IRHNM593110
IRHNM593110
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 1A
  • Generation
    R5
  • ID (@100°C) max
    -2 A
  • ID (@25°C) max
    -3.1 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    P
  • Product Category
    Rad hard MOSFETS
  • QG
    11 nC
  • QPL Part Number
    2N7506U8
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    1200 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    -100 V
  • VF max
    -5 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNM593110 is a R5, rad hard, -100V, -3.1A, single, P-channel MOSFET in a SMD-0.2 package. It has electrical performance up to 300krad(Si) TID and has low RDS(on) and low gate charge, making it suitable for switching applications such as DC-DC converters and motor controllers, while retaining the advantages of MOSFETs.

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