Active and preferred

IRHLNMC77110

Data Sheet
package

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IRHLNMC77110
IRHLNMC77110
Data Sheet

Product details

  • Die Size
    1
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@25°C) max
    6.5 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • QG
    11 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    290 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-CCN-3
Package Name SMD-0.2 Ceramic Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-CCN-3
Package Name SMD-0.2 Ceramic Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHLNMC77110 R7 MOSFET is a radiation-hardened device with 100V, 6.5A rating. It's a single N-channel MOSFET in a SMD-0.2 package with electrical performance up to 100krad(Si) TID. Ideal for interfacing CMOS and TTL control circuits to power devices in space and other radiation environments, this COTS device maintains single event gate rupture and burnout immunity, while the threshold voltage remains within acceptable operating limits.

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