not for new design

IRHLNMC77110

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
Data Sheet
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IRHLNMC77110
IRHLNMC77110
Data Sheet

Product details

  • Die Size
    1
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@25°C) max
    6.5 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • QG
    11 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    290 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHLNMC77110 R7 MOSFET is a radiation-hardened device with 100V, 6.5A rating. It's a single N-channel MOSFET in a SMD-0.2 package with electrical performance up to 100krad(Si) TID. Ideal for interfacing CMOS and TTL control circuits to power devices in space and other radiation environments, this COTS device maintains single event gate rupture and burnout immunity, while the threshold voltage remains within acceptable operating limits.

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }