IRF3546M

60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET
Data Sheet

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IRF3546M
IRF3546M
Data Sheet

Product details

  • ID (@ TC=100°C) max
    16 A
  • ID max
    20 A
  • ID (@ TC=70°C) max
    20 A
  • Moisture Sensitivity Level
    3
  • Package
    Power Block (PQFN 6x8)
  • Qgd (typ)
    6 nC
  • QG
    22 nC
  • RDS (on) (@10V) max
    1.8 mΩ
  • RDS (on) (@4.5V) max
    2.2 mΩ
  • RDS (on) max
    1.8 mΩ
  • RthJA max
    18.4 K/W
  • VDS max
    60 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • Peak efficiency up to 94% at 1.2V
  • Two pairs of control and synchronous MOSFETs in a single PQFN package
  • Proprietary package minimizes package parasitic and simplifies PCB layout
  • Input voltage (VIN) range of 4.5V to 21V
  • Output current capability of 30A/phase
  • Ultra-low Rg MOSFET technology minimizes switching losses for optimized high frequency performance
  • Synchronous MOSFET with monolithic integrated Schottky diode reduces dead-time and diode reverse recovery losses
  • Efficient dual side cooling
  • Small 6mm x 8 mm x 0.9mm PQFN package
  • Lead-free RoHS compliant package
  • FastIRFET™

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }