NEW
Active and preferred
RoHS Compliant
Lead-free

IMCQ120R004M2H

NEW
CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Data Sheet
package
Multiple OPNs available
ea.

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IMCQ120R004M2H
IMCQ120R004M2H
ea.
Data Sheet

Product details

  • Ciss
    13 nF
  • Coss
    574 pF
  • ID (@25°C) max
    403 A
  • ID (@ TA=25°C) max
    403 A
  • Mounting
    SMD
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PG-HDSOP-22-U03
  • Pin Count
    4 Pins
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    1500 W
  • Qgd
    86 nC
  • QG
    348 nC
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    3.7 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.07 K/W
  • Technology
    CoolSiC™ G2
  • Tj max
    175 °C
  • VDS max
    1200 V
Recommended
OPN
IMCQ120R004M2HXUMA1 IMCQ120R004M2HXTMA1
Product Status active and preferred coming soon
Infineon Package
PG-HDSOP-22
PG-HDSOP-22
Package Name Q-DPAK Q-DPAK
Packing Size 750 750
Packing Type TAPE & REEL TAPE & REEL
Moisture Level 2 1
Moisture Packing DRY NON DRY
Lead-free Yes Yes
Halogen Free Yes Yes
RoHS Compliant Yes Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 2
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock

Product Status coming soon
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
CoolSiC™ MOSFET discrete 1200 V, 4 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.

Features

  • VDSS = 1200 V @Tvj = 25°C
  • IDDC = 287 A at TC = 100°C
  • RDS(on) = 3.7 mΩ @VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage
  • Robust against parasitic turn on
  • Robust body diode for hard commutation
  • .XT interconnection technology

Benefits

  • Outstanding thermal performance
  • Increases energy efficiency
  • Higher power density
  • More compact and easier designs
  • Lower TCO cost or BOM cost

Documents

Documents

Design resources

Partner solutions

Developer community

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