IGLD60R190D1S

CoolGaN™ 600 V enhancement mode power transistor with fast turn-on and turn-off speed and minimum switching losses
Data Sheet

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IGLD60R190D1S
IGLD60R190D1S
Data Sheet

Product details

  • Green
    RoHS compliant, Halogen free
  • ID (@ TA=25°C) max
    10 A
  • IDpuls (@25°C) max
    23 A
  • Product Name
    IGLD60R190D1S
  • QG
    3.2 nC
  • RDS (on) (typ)
    140 mΩ
  • VDS max
    600 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IGLD60R190D1S enables more compact topologies at higher efficiency and higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled LSON-8 (DFN 8x8) package, it enables ideal power disspation as required in contemporary USB-C adapters and chargers.

Features

  • E-mode HEMT – normally OFF 
  • Ultra fast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Consumer-grade qualification
  • Bottom-side cooled

Benefits

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

Applications

Documents

Documents

Design resources

Partner solutions

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