Active and preferred
RoHS Compliant
Lead-free

IGI60L5050B1M

500 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
Data Sheet

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IGI60L5050B1M
IGI60L5050B1M
Data Sheet

Product details

  • Green
    RoHS compliant, Halogen free
  • ID (@25°C) max
    3 A
  • IDpuls (@25°C) max
    6.7 A
  • QG
    0.52 nC
  • RDS (on) (typ)
    500 mΩ
  • VDS max
    600 V
Recommended
OPN
IGI60L5050B1MXUMA1
Product Status active and preferred
Infineon Package PG-TFLGA-27
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package PG-TFLGA-27
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
IGI60L5050B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 500 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.

Features

  • Integrated level shift gate driver
  • Integrated bootstrap diode
  • PWM input compatible
  • Wide VDD range (10 to 24 V)
  • Turn-ON & OFF dv/dt slew rate control
  • Zero Qrr

Benefits

  • 4x reduction in components count
  • 2x reduction of footprint on a PCB

  • Reduced cost
  • Reduced weight
  • Reduced complexity

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }