IGD015S10S1
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RoHS Compliant

IGD015S10S1

NEW
CoolGaN™ Transistor 100 V G3 in RQFN 5x6, 1.2 mΩ
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IGD015S10S1
IGD015S10S1

Product details

  • Family
    CoolGaN™ Transistor 100 V G3
  • ID (@25°C) max
    164 A
  • IDpuls (@25°C) max
    880 A
  • Package
    RQFN 5x6
  • Planned to be available until at least
    2035
  • QG
    22 nC
  • Qualification
    Industrial
  • RDS (on) (typ)
    1.2 mΩ
  • VDS max
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The IGD015S10S1 is a 100 V normally-off e-mode power transistor housed in a Si-footprint-compatible RQFN 5x6 package, enabling high-power-density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

Features

  • 100 V e-mode power transistor
  • Dual-side cooled package
  • Ultrafast switching frequency
  • No reverse recovery charge
  • Reverse conduction capability
  • Ultralow gate and outputcharge
  • Qualfied according to JEDEC
  • Moisture rating MSL1

Benefits

  • Best-in-class power density
  • Highest efficiency
  • Improved thermal management
  • Enabling smaller and lighter designs
  • Excellent reliability
  • Lowering BOM cost

Applications

Documents

Design resources

Partner solutions

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