Active and preferred
RoHS Compliant
Lead-free

FM25CL64B-GTR

High-Density 64 kBit SPI F-RAM Memory device | 20MHz, -40 to 85°C, Pure Sn Finish - Ideal for Industrial Applications
Data Sheet
package
ea.
in stock

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FM25CL64B-GTR
FM25CL64B-GTR
ea.
Data Sheet

Product details

  • Density
    64 kBit
  • Frequency
    20 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 3.65 V
  • Operating Voltage range
    2.7 V to 3.65 V
  • Organization (X x Y)
    8Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM25CL64B-GTR
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM25CL64B-GTR is a 64-Kbit (8K × 8) serial F-RAM with SPI interface, supporting up to 20 MHz clock and operating from 2.7 V to 3.65 V over –40°C to +85°C. It features 100 trillion read/write cycle endurance, 151-year data retention at 65°C, and NoDelay™ writes at bus speed, eliminating write delays.

Features

  • 64-Kbit (8K × 8) F-RAM memory
  • 100 trillion (10¹⁴) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ writes at bus speed
  • Up to 20 MHz SPI interface
  • Hardware and software write protection
  • 200 μA active current at 1 MHz
  • 3 μA typical standby current
  • VDD operation: 2.7 V to 3.65 V
  • Industrial temp range: –40°C to +85°C
  • Direct replacement for serial flash/EEPROM
  • Supports SPI mode 0 and 3

Benefits

  • Reliable for frequent, rapid data writes
  • Eliminates write delays for faster operation
  • Prevents data loss during power cycles
  • Low power extends battery life
  • Easy integration into existing designs
  • Protects data with multiple safeguards
  • Operates in harsh industrial conditions
  • No polling needed after writes
  • Drop-in upgrade for legacy systems
  • High endurance reduces maintenance
  • Wide voltage range for flexible use
  • Fast SPI enables high-speed data transfer

Documents

Documents

Design resources

Partner solutions

Developer community

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