CY7C1371KV33-100AXI
Active and preferred
RoHS Compliant
Lead-free

CY7C1371KV33-100AXI

Data Sheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY7C1371KV33-100AXI
CY7C1371KV33-100AXI
ea.
Data Sheet

Product details

  • Architecture
    NoBL, Flow-through
  • Bank Switching
    N
  • Burst Length (Words)
    4
  • Data Width
    x 36
  • Density
    18 MBit
  • ECC
    N
  • Family
    NoBL
  • Frequency
    100 MHz
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • On-Die Termination
    N
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    3.135 V to 3.6 V
  • Organization (X x Y)
    512Kb x 36
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2031
  • Qualification
    Industrial
  • Read Latency (Cycles)
    1
Recommended
OPN
CY7C1371KV33-100AXI
Product Status active and preferred
Infineon Package
PG-TQFP-100
Package Name TQFP-100 (51-85050)
Packing Size 144
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TQFP-100
Package Name TQFP-100 (51-85050)
Packing Size 144
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY7C1371KV33-100AXI is an 18-Mbit (512K × 36) synchronous flow-through burst SRAM with NoBL™ architecture and on-chip ECC. It supports 100 MHz operation with 8.5 ns max access time and registered inputs for zero-wait-state back-to-back read/write transfers on every clock. Features include byte writes, linear or interleaved 4-beat bursts, CEN clock gating, and ZZ sleep mode. Industrial -40 to +85°C, 3.3 V VDD.

Features

  • NoBL architecture, no dead cycles
  • Up to 133 MHz, zero wait states
  • 6.5 ns clock-to-output (133 MHz)
  • Data on every clock cycle
  • Burst: linear or interleaved
  • Byte write via BWx + WE
  • Registered synchronous inputs
  • Self-timed synchronous writes
  • Asynchronous OE output control
  • 3 chip enables (CE1/CE2/CE3)
  • Sleep mode via ZZ; 2tCYC entry/exit
  • On-chip ECC lowers soft errors

Benefits

  • Seamless read/write switching
  • High throughput at 133 MHz bus
  • Faster access for tight timing
  • Predictable per-cycle transfers
  • Efficient burst data streaming
  • Update bytes without full writes
  • Simplifies synchronous timing
  • Reliable writes at high speed
  • Easy bus tri-state control
  • Simple bank selection/expansion
  • Cut standby power in sleep
  • Better data integrity in radiation

Applications

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }