CY621472G30-45ZSXA
Active and preferred
RoHS Compliant
Lead-free

CY621472G30-45ZSXA

Data Sheet
package

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CY621472G30-45ZSXA
CY621472G30-45ZSXA
Data Sheet

Product details

  • Density
    4 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Ni/Pd/Au
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    256Kb x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(A)
  • Speed
    45 ns
Recommended
OPN
CY621472G30-45ZSXA
Product Status active and preferred
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 1350
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 1350
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY621472G30-45ZSXA is a 4-Mbit (256K × 16) CMOS asynchronous SRAM with embedded ECC for single-bit error correction. This dual chip-enable device operates from 2.2 V to 3.6 V with 45 ns access time, and supports -40°C to +85°C Automotive-A range. It features typical 3.5 µA standby current, 1.0-V data retention, and byte write/read via BLE and BHE. Housed in a Pb-free 44-pin TSOP II package.

Features

  • 4-Mbit SRAM (256K x 16-bit)
  • Embedded ECC single-bit correction
  • 45 ns read cycle time
  • 16-bit I/O with byte enables
  • BHE/BLE byte power-down mode
  • VCC range 2.2 V to 3.6 V
  • Standby current typ 3.5 µA
  • Data retention down to 1.0 V
  • ICCDR max 13 µA at VCC = 1.2 V
  • OE to data valid 22 ns
  • Output drive 20 mA (LOW)
  • ESD >2001 V (MIL-STD-883)

Benefits

  • 16-bit bus boosts throughput
  • ECC corrects soft errors in RAM
  • 45 ns access cuts wait states
  • Byte enables simplify 8-bit use
  • Byte power-down saves standby
  • 2.2–3.6 V fits 3.3 V rails
  • 3.5 µA standby extends battery
  • 1.0 V retention keeps data alive
  • Low ICCDR reduces backup power
  • 22 ns OE timing speeds reads
  • 20 mA drive eases bus interfacing
  • ESD robustness improves reliability
Documents

Design resources

Partner solutions

Developer community

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