BGA7L1N6

Data Sheet

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BGA7L1N6
BGA7L1N6
Data Sheet

Product details

  • Frequency
    716 - 960 MHz
  • Gain
    13.3 dB
  • I
    4.5 mA
  • IIP3
    0 dBm
  • NF
    0.9 dB
  • P-1dB (in)
    -3 dBm
  • VCC operating
    1.5 V to 3.3 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Silicon Germanium Low Noise Amplifier for LTE

Features

  • Insertion power gain: 13.3 dB
  • Low noise figure: 0.90 dB
  • Low current consumption: 4.4 mA
  • Operating frequencies: 728 - 960 MHz
  • Supply voltage: 1.5 V to 3.3 V
  • Digital on/off switch (1V logic high level)
  • Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
  • B7HF Silicon Germanium technology
  • RF output internally matched to 50 Ω
  • Only 1 external SMD component necessary
  • 2kV HBM ESD protection (including AI-pin)
  • Pb-free (RoHS compliant) package

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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