IQE006NE2LM5CG
OptiMOS™ low-voltage power MOSFET 25V in PQFN 3.3x3.3 Source-Down Center-Gate package with industry leading RDS(on)
With Infineon’s innovative Source-Down technology, the OptiMOS™ low-voltage power MOSFET (IQE006NE2LM5CG) is available as a Center-Gate footprint version. Placing the gate in the middle of the footprint leads to an optimized source connection. The Center-Gate footprint offers the advantage of optimized and easy parallelization of MOSFETs as the Center Gate comes with a larger drain to source creepage distance. With this it is possible to connect the gates of multiple devices on a single PCB layer, improving current capability, resulting in higher output levels. In addition, the Source-Down Center-Gate footprint offers high system efficiency and high power density.
Summary of Features
- RDS(on) reduction up to 30 percent depending on the voltage class
- Superior thermal management option
- Optimized layout possibilities
- Two footprint versions available
Benefits
- Higher current capability
- Highest power density and performance
- Shrink of form factor
- Same performance as Super SO8 in a smaller package
- Optimized PCB parasitics
- Decrease of RthJA and RthJC
- Better transfer of power losses
- Supports double side cooling (exposed clip)
- Source-Down is easy to adapt on existing PCB
- Center-Gate option enables optimized parallelization
Potential Applications
