GaN transistors (GaN HEMTs)

Explore CoolGaN™ Transistors, discrete and integrated normally-off devices, ranging from 60 V up to 700 V, for highest efficiency and power density 

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Overview

Infineon’s gallium nitride (GaN) transistors are available in voltage ranges from 60 V up to 700 V. The fast turn-on and turn-off speeds with minimal switching losses are crucial for AI data centers, EVs, renewable energy, humanoid robots, consumer applications and many more. With various packages and rigorous qualifications exceeding industry standards, Infineon’s GaN devices enable high-frequency switching while reducing costs and system size. Elevate your designs with Infineon’s GaN transistors.

Key Features

  • 60 V - 700 V GaN transistors
  • Top and bottom side cooled packages
  • Ultrafast switching-speed
  • Superior FOMs
  • Continous current: 4 A - 100 A
  • RDS(on)typ. from 1.4 mΩ to 450 mΩ
  • Enhancement mode (e-mode)
  • No reverse-recovery charge
  • Ultra-low gate and output charge

Products

About

What are the benefits of Infineon’s GaN transistors?

•   Looking to enhance your system's efficiency? By utilizing Infineon's GaN transistors, you can significantly reduce switching losses, leading to improved overall system efficiency.

•   How about improving power density? With their higher switching frequencies, Infineon's GaN devices allow for smaller passive components, which can help reduce the overall size of your designs.

•   Want to reduce the weight of your system? Infineon's GaN transistors enable the use of fewer materials and smaller components, resulting in a reduced system weight. With their superior switching speed, these transistors deliver high power density while minimizing energy losses across various applications, empowering designers to create smaller, lighter, and more compact systems that still offer top performance.

When compared to traditional silicon (Si) switches, Infineon's GaN transistors feature higher thermal performance, which facilitates usage in high-current applications such as AI data centers and enhances reliability. Infineon’s CoolGaN™ Transistors are specifically designed for robustness, durability, and withstanding high voltage spikes ensuring a longer lifespan for your applications. 

Gate driver ICs for GaN

Selecting the right gate driver IC is critical to optimize performance of the GaN while minimizing system cost. Infineon's comprehensive portfolio of EiceDRIVER™ gate driver ICs offers a range of single- and dual-channel isolated, level-shift, and non-isolated gate driver designed for both Infineon's CoolGaN™ Schottky Gate (SG) HEMTs  and gate injection transistor (GIT)  HEMTs.

Explore the EiceDRIVER(TM) portfolio and find the right driver for you. 

Gate driver ICs for GaN
GaN packaging

The portfolio in the 60 V to 200 V range housed in the PQFN 3x3 and PQFN 3x5 packages has a moisture sensitivity level (MSL) rating of 1, which makes them suitable for standard storage and handling conditions.

In the high-voltage arena (≥600 V), we offer a very broad variety of SMD packages, ranging from TOLL, TOLT, ThinPAK 5x6, DFN 8x8, to top- and bottom-side cooled DSO. These packages cater to diverse design requirements and offer a perfect blend of compact size, improved thermal performance, cost-effectiveness, and design flexibility.

GaN system design partners

Infineon CoolGaN™ delivers discrete and integrated GaN power solutions with proven reliability, assured long‑term supply, and expert support to enable highest performance and more efficient systems across consumer, industrial, and automotive applications. Together with our global go-to-market (G2M) partner ecosystem, we provide turnkey solutions, reference designs, services and disruptive technologies that shorten development cycles, accelerate time-to-market and provide innovative and differentiating features to our customers’ products

Explore our partners
Interested in our CoolGaN™ solutions?

Infineon’s discrete and integrated GaN solutions deliver highest efficiency and power density in consumer, industrial, and automotive applications. If you are interested in our CoolGaN™ products and solutions, don’t hesitate to contact our GaN experts.

Get in touch with us
What are the benefits of Infineon’s GaN transistors?

•   Looking to enhance your system's efficiency? By utilizing Infineon's GaN transistors, you can significantly reduce switching losses, leading to improved overall system efficiency.

•   How about improving power density? With their higher switching frequencies, Infineon's GaN devices allow for smaller passive components, which can help reduce the overall size of your designs.

•   Want to reduce the weight of your system? Infineon's GaN transistors enable the use of fewer materials and smaller components, resulting in a reduced system weight. With their superior switching speed, these transistors deliver high power density while minimizing energy losses across various applications, empowering designers to create smaller, lighter, and more compact systems that still offer top performance.

When compared to traditional silicon (Si) switches, Infineon's GaN transistors feature higher thermal performance, which facilitates usage in high-current applications such as AI data centers and enhances reliability. Infineon’s CoolGaN™ Transistors are specifically designed for robustness, durability, and withstanding high voltage spikes ensuring a longer lifespan for your applications. 

Gate driver ICs for GaN

Selecting the right gate driver IC is critical to optimize performance of the GaN while minimizing system cost. Infineon's comprehensive portfolio of EiceDRIVER™ gate driver ICs offers a range of single- and dual-channel isolated, level-shift, and non-isolated gate driver designed for both Infineon's CoolGaN™ Schottky Gate (SG) HEMTs  and gate injection transistor (GIT)  HEMTs.

Explore the EiceDRIVER(TM) portfolio and find the right driver for you. 

Gate driver ICs for GaN
GaN packaging

The portfolio in the 60 V to 200 V range housed in the PQFN 3x3 and PQFN 3x5 packages has a moisture sensitivity level (MSL) rating of 1, which makes them suitable for standard storage and handling conditions.

In the high-voltage arena (≥600 V), we offer a very broad variety of SMD packages, ranging from TOLL, TOLT, ThinPAK 5x6, DFN 8x8, to top- and bottom-side cooled DSO. These packages cater to diverse design requirements and offer a perfect blend of compact size, improved thermal performance, cost-effectiveness, and design flexibility.

GaN system design partners

Infineon CoolGaN™ delivers discrete and integrated GaN power solutions with proven reliability, assured long‑term supply, and expert support to enable highest performance and more efficient systems across consumer, industrial, and automotive applications. Together with our global go-to-market (G2M) partner ecosystem, we provide turnkey solutions, reference designs, services and disruptive technologies that shorten development cycles, accelerate time-to-market and provide innovative and differentiating features to our customers’ products

Explore our partners
Interested in our CoolGaN™ solutions?

Infineon’s discrete and integrated GaN solutions deliver highest efficiency and power density in consumer, industrial, and automotive applications. If you are interested in our CoolGaN™ products and solutions, don’t hesitate to contact our GaN experts.

Get in touch with us
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