Active and preferred
RoHS Compliant
Lead-free

S80KS5122GABHV020

Data Sheet
package
ea.
in stock

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S80KS5122GABHV020
S80KS5122GABHV020
ea.
Data Sheet

Product details

  • Density
    512 MBit
  • Family
    KS-2
  • Initial Access Time
    35 ns
  • Interface Bandwidth
    400 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    - / 200
  • Interfaces
    HYPERBUS
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 105 °C
  • Operating Voltage range
    1.7 V to 2 V
  • Operating Voltage
    1.8 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    See roadmap
  • Qualification
    Industrial
  • Technology
    HYPERRAM
Recommended
OPN
S80KS5122GABHV020
Product Status active and preferred
Infineon Package
PG-BGA-24
Package Name BGA-24 (002-15550)
Packing Size 338
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-BGA-24
Package Name BGA-24 (002-15550)
Packing Size 338
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
S80KS5122GABHV020 is a 512 Mb HYPERRAM™ self-refresh DRAM using a 1.8 V HYPERBUS™ interface with CS#, RESET#, 8-bit DQ, and RWDS strobe. It supports DDR transfers up to 200 MHz for up to 400 MBps (3,200 Mb/s) throughput and 35 ns max access time. Supply is 1.7 V to 2.0 V, and power modes include interface standby, hybrid sleep, and deep power down (30 µA at 105°C). It comes in a 24-ball FBGA.

Features

  • HyperBus interface
  • 1.7 V to 2.0 V VCC supply
  • Single or differential clock input
  • 8-bit DDR bus with RWDS strobe
  • 200 MHz maximum clock rate
  • Up to 400 MBps data throughput
  • 35 ns maximum access time tACC
  • Burst: linear or wrapped
  • Wrap bursts: 16/32/64/128 bytes
  • Interface standby ignores I/O pins
  • Active clock stop after tACC+30 ns
  • Hybrid sleep via CR1[5], data kept

Benefits

  • 400 MBps supports fast buffering
  • DDR boosts bandwidth per pin
  • 1.8 V I/O matches low-voltage SoCs
  • RWDS strobe eases timing closure
  • Linear burst fits streaming reads
  • Wrap bursts match cache line fills
  • Standby reduces idle power draw
  • Clock stop saves power on stalls
  • Hybrid sleep keeps RAM contents
  • HS entry in 3 us reduces wake cost
  • HS exit in 100 us improves response
  • Deep power down cuts leakage

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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