Active and preferred
RoHS Compliant
Lead-free

S25FL256SDSBHVA10

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S25FL256SDSBHVA10
S25FL256SDSBHVA10

Product details

  • Density
    256 MBit
  • Family
    FL-S
  • Interface Bandwidth
    80 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / 80
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 105 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
OPN
S25FL256SDSBHVA10
Product Status active and preferred
Infineon Package
Package Name FBGA-24 (002-15534)
Packing Size 676
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name FBGA-24 (002-15534)
Packing Size 676
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S25FL256SDSBHVA10 is a 256 Mb SPI NOR flash memory based on 65-nm MIRRORBIT™ technology for embedded and automotive use. It supports single, dual, and quad SPI Multi-I/O modes, with read speeds up to 80 MBps and page programming up to 1.5 MBps. Operating from 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O, it is AEC-Q100 Grade 3 qualified. Security features include a 1024-byte OTP region, block protection, and password-controlled sector protection.

Features

  • MIRRORBIT™ technology stores 2 bits per cell
  • Eclipse architecture for fast program/erase
  • SPI Multi-I/O: x1, x2, x4 data width support
  • DDR read commands for higher throughput
  • 256B/512B page programming buffer
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles minimum
  • 20-year data retention minimum
  • 1024-byte One-Time Programmable (OTP) area
  • Advanced sector protection (ASP)
  • Core voltage: 2.7 V to 3.6 V, I/O: 1.65 V to
  • Operating temp: –40°C to +125°C

Benefits

  • High density, low-cost storage solution
  • Fast read/write boosts system performance
  • Flexible interface fits many host controllers
  • DDR/QIO enables high-speed data access
  • Large buffer improves programming efficiency
  • Multiple erase options ease migration
  • Reliable for frequent updates and code
  • Long retention ensures data integrity
  • OTP secures device identity and config
  • Sector protection prevents unwanted changes
  • Wide voltage range supports diverse systems
  • Broad temp range fits harsh environments

Applications

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }