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JANSR2N7616UBC

Data Sheet
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JANSR2N7616UBC
JANSR2N7616UBC
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    Z
  • ESD Class
    Class 0
  • Generation
    R7
  • ID (@100°C) max
    0.5 A
  • ID (@25°C) max
    0.8 A
  • Language
    SPICE, SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    UBC
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    3.6 nC
  • QPL Part Number
    2N7616UBC
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    680 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    60 V
  • VF max
    1.2 V
  • Voltage Class
    100 V, 100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-LCC-4
Package Name LCC-3 + Gnd Pin Ceramic Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-LCC-4
Package Name LCC-3 + Gnd Pin Ceramic Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
N-channel MOSFET JANSR2N7616UBC is a radiation-hardened power device designed for use in space and other radiation environments. With a voltage rating of 60V and a current rating of 0.8A, it features QPL qualification, single event gate rupture, and burnout immunity. Its threshold voltage remains constant even after radiation. This R7 device may be used to increase output current of PWM or operational amplifiers.

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