Active and preferred

JANSF2N7666T1

From -30 V to -200 V, DLA-qualified for space applications
Data Sheet
package

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JANSF2N7666T1
JANSF2N7666T1
Data Sheet

Product details

  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R9
  • ID (@25°C) max
    -45 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    Low-Ohmic TO-254AA
  • Polarity
    P
  • QG
    230 nC
  • QPL Part Number
    2N7666T1
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    34 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    -200 V
  • VF max
    -1.3 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Rad hard, -200V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 300 krad(Si) TID, QPL

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Improved SOA for linear mode operation
  • Fast switching
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Electrically isolated
  • Ceramic eyelets
  • Light Weight
  • Surface mount
  • ESD rating: Class 1B per MIL-STD-750, Method 1020

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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