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JANSF2N7616UBN

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JANSF2N7616UBN
JANSF2N7616UBN
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 0
  • Generation
    R7
  • ID (@100°C) max
    0.5 A
  • ID (@25°C) max
    0.8 A
  • Language
    SPICE, SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    UB
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    3.6 nC
  • QPL Part Number
    2N7616UB
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    680 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    60 V
  • VF max
    1.2 V
  • Voltage Class
    100 V, 100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
JANSF2N7616UBN is a single N-channel MOSFET with 60V and 0.8A rating. Designed for the harsh radiation environment of space, this R7 device has an electrical performance of up to 300krad(Si) TID and QPL classification. The UB package makes it easy to interface with most logic gates and micro-controllers. Ideal for increasing output current and interfacing with 3.3-5V sources in space power systems.

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