IRHMS6S7264

Data Sheet

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IRHMS6S7264
IRHMS6S7264
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    28.5 A
  • ID (@25°C) max
    45 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • QG
    220 C
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    41 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHMS6S7264 R6 N-channel MOSFET is a high-performance, rad hard MOSFET for space applications. It features 250V, 45A, and low RDS(on) and gate charge, reducing power losses in switching applications. This COTS device retains all the advantages of MOSFETs, including voltage control, fast switching, and temperature stability. It's characterized for Total Dose and Single Event Effect up to LET of 90 MeV·cm2/mg.

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }