IRHMB6S7160SCS

Data Sheet

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IRHMB6S7160SCS
IRHMB6S7160SCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    45 A
  • ID (@25°C) max
    45 A
  • Optional TID Rating (kRad(si))
    100
  • Package
    TO-254AA Tabless Low Ohmic
  • Polarity
    N
  • QG
    170 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    11 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
This rad hard N-channel MOSFET features R6 technology with 100V, 45A rating. It comes in a TO-254AA tabless low ohmic package with electrical performance up to 100krad(Si) TID, QIRL classification. The device has low RDS(on), low gate charge, voltage control, fast switching, and temperature stability, making it ideal for motor control and DC-DC converters. SEE performance up to LET of 60 MeV·cm2/mg.

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