IRF7379

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Data Sheet

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IRF7379
IRF7379
Data Sheet

Product details

  • ID (@25°C) max
    -4.3 A, 5.8 A
  • Moisture Sensitivity Level
    1
  • Package
    SO-8
  • Polarity
    N+P
  • Ptot (@ TA=25°C) max
    2.5 W
  • Qgd (typ)
    6 nC, 5.3 nC
  • QG (typ @10V)
    16.7 nC, 16.7 nC
  • RDS (on) (@10V) max
    45 mΩ, 90 mΩ
  • RDS (on) (@4.5V) max
    75 mΩ, 180 mΩ
  • RthJA max
    50 K/W
  • Tj max
    150 °C
  • VDS max
    30 V
  • VGS(th) min
    1 V, -1 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual N and P-Channel MOSFET

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