IAUTN08S7N006
NEW
Active and preferred
RoHS Compliant

IAUTN08S7N006

NEW
80 V, N-Ch, 0.57 mΩ max, Automotive MOSFET, TOLL (10x12), OptiMOS™ 7
Datasheet
package

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IAUTN08S7N006
IAUTN08S7N006
Datasheet

Product details

  • ID (@ TA=25°C)
    350 A
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    PG-HSOF-8
  • Polarity
    N
  • QG (typ @10V) max
    298 nC
  • QG (typ @10V)
    229 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    0.57 mΩ
  • Technology
    OptiMOS™7
  • VDS max
    80 V
  • VGS(th) (typ) range
    2.3 V to 3.2 V
  • VGS(th) (typ)
    2.8 V
Recommended
OPN
IAUTN08S7N006ATMA1
Product Status active and preferred
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-HSOF-8
Package Name TOLL
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
IAUTN08S7N006 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80 V. This product is offered in the TOLL 10x12 mm² power package, which Infineon first introduced to the market. It is designed, qualified and manufactured specifically for the high performance, quality, and robustness needed for demanding automotive applications.

Features

  • Industry’s best on-resistance, RDS (on)
  • Leading edge FOM (RDS(on) x Qg)
  • Fast switching times (turn on/off)
  • High power, high current TOLL package
  • Low package resistance and inductance
  • Excellent thermal performance
  • High SOA ruggedness
  • Tight threshold voltage, VGS(th), range
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Package is listed with JEDEC

Benefits

  • Minimized conduction losses
  • Superior switching performance
  • Higher power density
  • Higher efficiency
  • Increased design ruggedness
  • Well-suited for parallel placement
  • Could reduce MOSFET part count on BOM
  • Quality and robustness for automotive
  • Potential for second source supplier
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