Active and preferred
RoHS Compliant

FM25V05-GTR

High-Density 512 kBit SPI F-RAM for Industrial Applications with Wide Operating Range
Data Sheet
package

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FM25V05-GTR
FM25V05-GTR
Data Sheet

Product details

  • Density
    512 kBit
  • Frequency
    40 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2 V to 3.6 V
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Organization (X x Y)
    64Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM25V05-GTR
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The FM25V05-GTR is a 512-Kbit (64K × 8) serial F-RAM with a high-speed SPI interface up to 40 MHz, providing virtually unlimited endurance of 100 trillion (1e14) read/write cycles and 151-year data retention. Operating from 2.0 V to 3.6 V over –40°C to +85°C, it features low active (0.3 mA at 1 MHz) and standby (90 μA typ) currents, 5 μA sleep mode, and robust hardware and software write protection.

Features

  • 100 trillion (10¹⁴) read/write endurance
  • 151-year data retention at 65°C
  • NoDelay™ instant write technology
  • Up to 40 MHz SPI bus frequency
  • Direct hardware replacement for serial
  • Supports SPI mode 0 and mode 3
  • Sophisticated write protection scheme
  • Hardware write protect (WP pin)
  • Software write disable instruction
  • Block protection for 1/4, 1/2, or full array
  • Device ID with manufacturer and product info
  • Low power: 300 μA active, 90 μA standby, 5 μA

Benefits

  • Eliminates endurance limits of EEPROM/flash
  • Reliable data retention for 151 years
  • No write delays, instant data storage
  • 40 MHz SPI enables fast data transfer
  • Drop-in upgrade for legacy designs
  • Flexible SPI mode compatibility
  • Protects data from accidental writes
  • Hardware pin adds robust security
  • Software disable prevents unwanted writes
  • Block protection enables flexible security
  • Device ID simplifies inventory
  • Low power reduces system energy use

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }