Active and preferred
RoHS Compliant
Lead-free

FM18W08-SG

Data Sheet
package
ea.
in stock

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FM18W08-SG
FM18W08-SG
ea.
Data Sheet

Product details

  • Density
    256 kBit
  • Family
    Parallel FRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.7 V to 5.5 V
  • Operating Voltage range
    2.7 V to 5.5 V
  • Organization (X x Y)
    32Kb x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    70 ns
Recommended
OPN
FM18W08-SG
Product Status active and preferred
Infineon Package
PG-DSO-28
Package Name SOIC-28 (51-85026)
Packing Size 540
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-28
Package Name SOIC-28 (51-85026)
Packing Size 540
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM18W08-SG is a 256-Kbit (32 K × 8) bytewide ferroelectric random access memory (F-RAM) offering nonvolatile storage with immediate write capability and endurance of 100 trillion cycles. Operating from 2.7 V to 5.5 V across –40°C to +85°C, it features up to 151 years data retention at 65°C, 70-ns access time, 28-pin SOIC packaging, and low power consumption. Ideal for frequent-write, high-reliability applications in industrial, instrumentation, and data logging systems.

Features

  • 32 K × 8 bytewide F-RAM memory
  • Nonvolatile, data retained after power loss
  • 100 trillion (10¹⁴) read/write endurance
  • 151-year data retention at +65°C
  • NoDelay™ writes, SRAM-like speed
  • Industry-standard parallel interface
  • 70 ns access time, 130 ns cycle time
  • 2.7 V to 5.5 V wide voltage operation
  • Active current 12 mA (max), standby 20 μA
  • SRAM and EEPROM pinout compatible
  • Resistant to shock, vibration, moisture
  • Advanced ferroelectric process reliability

Benefits

  • Eliminates battery backup for data retention
  • Enables frequent, fast data logging
  • Drop-in replacement for SRAM/EEPROM
  • No write delays, instant memory updates
  • Reliable operation in harsh environments
  • Low power extends system battery life
  • Simplifies design, no polling needed
  • Long lifetime, reduces maintenance
  • Consistent speed for read/write cycles
  • Wide voltage fits various platforms
  • High endurance for intensive applications
  • Robust against voltage transients

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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