AIDW12S65C5

AIDW12S65C5

Data Sheet

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AIDW12S65C5
AIDW12S65C5
Data Sheet

Product details

  • I(FSM) max
    71 A
  • IF max
    12 A
  • IR
    2.1 µA
  • Package
    TO-247
  • Ptot max
    75.8 W
  • QC
    18 nC
  • Qualification
    Automotive
  • RthJC
    1.53 K/W
  • VF
    1.5 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The 5th Generation CoolSiC™ Automotive Schottky Diode showcases Infineon's advanced Silicon Carbide Schottky Barrier diode technology. With a compact design and thin wafer-based technology, it offers improved efficiency across all load conditions, complementing Infineon’s IGBT and CoolMOS™ portfolio to meet stringent application requirements in the 650V voltage class.

Features

  • Revolutionary semiconductor material - Silicon Carbide
  • Benchmark switching behavior
  • No reverse recovery/ No forward recovery
  • Temperature independent switching behavior
  • High surge current capability
  • Pb-free lead plating; RoHS compliant
  • Junction Temperature range from  -40°C to 175°C
  • System efficiency improvement over Si diodes
  • System cost / size savings due to reduced cooling requirements
  • Enabling higher frequency / increased power density solutions
  • Higher system reliability due to lower operating temperatures
  • Reduced EMI

Benefits

  • Traction inverter
  • Booster / DCDC Converter
  • On board Charger / PFC

Applications

Documents

Design resources

Partner solutions

Developer community

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