Infineon extends the CoolSiC™ MOSFET 750 V G2 family featuring ultra-low RDS(on) and new packages

Market News

Dec 10, 2025

Munich, Germany – 10 December 2025 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launches new packages for the CoolSiC™ MOSFET 750 V G2 technology, engineered to deliver highest system efficiency and power density in automotive and industrial power conversion applications. This latest innovation is now available in a range of packages, including Q-DPAK and D2PAK, offering a portfolio with typical RDS(on) values up to 60 mΩ at 25°C.
 
The portfolio extension includes products for various applications, such as onboard chargers and HV-LV DCDC converters in the automotive sector, and server and telecom SMPS, along with EV charging infrastructure in the industrial applications. The ultra-low RDS(on) values of 4 mΩ enables applications that require exceptional static-switching performance, such as eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays. This unparalleled performance enables designers to create more efficient, compact, and reliable systems that meet the most demanding requirements. 
 
One of the key features of the CoolSiC MOSFET 750 V G2 technology is its innovative top-side cooled Q-DPAK package, which provides optimal thermal performance and reliability. This package is designed to handle high-power applications with ease, making it an attractive choice for designers seeking to push the boundaries of power density and efficiency. The technology also exhibits excellent RDS(on) x QOSS and best-in-class RDS(on) x Qfr, contributing to reduced switching loss in both hard-switching and soft-switching topologies with superior efficiency in hard-switching user cases. 
 
Additionally, the CoolSiC MOSFETs 750 V G2 offer a combination of high threshold voltage VGS(th),typ of 4.5 V at 25°C and ultra-low QGD/QGS ratio, which reinforce robustness against parasitic turn-on (PTO). Furthermore, the technology allows for extended gate driving capabilities, supporting static gate voltages of up to -7 V and transient gate voltages of up to -11 V. This enhanced voltage tolerance provides engineers with greater design margins and best compatibility with other devices in the market.
 
Availability
The CoolSiC MOSFET 750 V G2 Q-DPAK 4/7/20/33/40/50 mΩ & D2PAK 7/25/33/40/50/60 mΩ samples are available now. More information is available at http://www.infineon.com/coolsic-750v

 

About Infineon

Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The Company had around 57,000 employees worldwide (end of September 2025) and generated revenue of about €14.7 billion in the 2025 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

 

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One of the key features of the CoolSiC MOSFET 750 V G2 technology is its innovative top-side cooled Q-DPAK package, which provides optimal thermal performance and reliability.

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Information Number : infpss202512-036

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Michael Burner

Spokesperson Consumer, Compute and Communication, PSS Division

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