not for new design

GS-EVM-HB-650V150A-SP1

650 V 150 A GaN half-bridge intelligent power module

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GS-EVM-HB-650V150A-SP1
GS-EVM-HB-650V150A-SP1

Product details

  • Family
    CoolGaN™
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The GS-EVM-HB-650V150A-SP1 is a 650 V 150 A half-bridge intelligent power module with integrated gate drive. It provides ultralow ESW (switching loss), integrated gate drive, ultrasmall system form factor, and low RDS(on). The module is designed for high-efficiency high switching frequency applications such as PV inverters, energy storage systems, UPS, and VFD and other general purpose use.

Features

  • Includes 2x GS-065-150-1-D
  • Isolated, integrated gate drive
  • Ultralow 0.2 0C/W RQ_JUNC_PLATE

Benefits

  • Low switching losses
  • Ultrasmall system form factor
  • Low RDS(on)

Documents

Design resources