Infineon launches industry-first silicon carbide bidirectional switch based on CoolSiC™ G2 technology

Market News

Jun 02, 2026

Munich, Germany – 02 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces silicon carbide (SiC) bidirectional switches (BDS) built on rugged 750 V CoolSiC™ G2 technology. A vertically integrated dual-die with common drain design in a top-side-cooled Q-DPAK package integrates two power switches into one for simplifying design and enable revolution of legacy topologies. While the available 650V CoolGaN BDS targets power density with high frequency, the 750V CoolSiC BDS delivers reliability margin what modern grids and energy systems demand resulting lowest Total Cost of Ownership during the application lifetime.

The 750 V CoolSiC BDS offers best-in-class R DS(on) x Q fr, superior R DS(on) x Q OSS, and low Q g, reducing switching and conduction losses for ultra-fast, efficient switching. A V GS(th),typ of 4.5 V at 25 °C paired with an ultra-low Q GD/Q GS ratio enhances immunity to parasitic turn-on, while extended gate-bias tolerance of −11 V to 25 V transient voltage increases design margin and compatibility. Rated at 200 V/ns dv/dt, these devices support high-frequency designs without compromising durability. The product portfolio will start from 14 mΩ, up to 66 mΩ. 

Engineered for demanding power systems, the 750 V CoolSiC BDS delivers 840 V (BR)DSS with superior margin for bus voltages above 500 V, proven avalanche resilience, overload endurance up to 200 °C for 100 hours, and 2 µs short-circuit withstand time. These devices safeguard systems from real-world voltage surges, energy pulses, transient stress, and inrush current – delivering durable, fault-tolerant operation.

The 750 V CoolSiC BDS expands Infineon's Top-Side Cooled family, enabling native liquid cooling in today's most demanding and rapidly evolving applications. New energy efficiency levels became possible with new design iteration on topology level. 

In automotive applications the devices are ideal for on-board chargers (OBCs) and EV charging as well as eFuse and pre-charge circuits. Paired with CoolSiC H-DPAK half-bridge, it enables a smooth transition to the single-stage OBC based on SiC technology, delivering high power-dense, space- and cost- efficient designs.

In industrial applications, it brings revolutions with rapidly evolving use cases:

  • HVDC AI PSU with native liquid cooling
  • Residential Solar and Storage 
  • HVAC for hospitals and onsite data centers 
  • CSI Drive for eVTOL
  • HVDC protection in power and IT rack
  • Humanoid fleet fast charging

Availability

Sampling has started. More information is available at http://www.infineon.com/coolsic-750v-bds

Infineon at the PCIM Europe 2026 

PCIM Europe will take place in Nuremberg, Germany, from 9 to 11 June 2026. Infineon will present its products and solutions for decarbonization and digitalization in hall 7, booth #470. Company representatives will also be giving several presentations at the PCIM Expo stages and the accompanying PCIM Conference, followed by discussions with the speakers. If you are interested in interviewing an expert at the show, please email media.relations@infineon.com. Industry analysts interested in a briefing can email MarketResearch.Relations@infineon.com. Information about Infineon’s PCIM 2026 show highlights is available at at www.infineon.com/pcim.

About Infineon

Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The Company had around 57,000 employees worldwide (end of September 2025) and generated revenue of about €14.7 billion in the 2025 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

 

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Information Number : infpss202606-098

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Michael Burner

Spokesperson Consumer, Compute and Communication, PSS Division

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