High Linearity Si- and SiGe:C-Transistors for use up to 6 GHz
In this category you find low-noise wideband amplifiers with OIP3 values above 29 dBm, so that they are usable e.g. as drivers in multi-stage amplifiers. They are all based on Infineon’s reliable high-volume silicon bipolar and SiGe:C technologies and achieve best in class noise figures. In each of the below subcategories you can find products housed in super miniature leadless TSLP-3 packages for modules.
The stated gain values Gmax apply to a frequency of 900 MHz (products for low frequencies and Si transistors with high gain up to 2.5 GHz) respectively to 1.8 GHz (Si transistors with high gain up to 2.5 GHz, SiGe:C transistors with high gain up to 6 GHz). The noise figure NFmin has been measured in a test fixture with a noise match at the input; the stated values apply to low frequencies. The OIP3 and OP1dB values have been measured in the 50 Ohm system and can be optimized by choosing an appropriate load impedance.
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