Silicon carbide MOSFET discretes

400 V up to 2000 V CoolSiC™ MOSFET discretes ideally suited for hard- and resonant-switching topologies

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Overview

CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC™ MOSFET portfolio comes in 400 V, 650 V, 750 V, 1200 V, 1700 V, and 2000 V voltage classes with on-resistance ratings from 7 mΩ up to 1000 mΩ.

Key Features

  • From 400 V up to 2000 V
  • Ratings from 7 mΩ up to 1000 mΩ
  • Flexible parameter-set
  • Low capacitances

Products

About

Introduction to CoolSiC™ MOSFET discretes

CoolSiC™ trench technology enables a flexible parameter set, which is used for the implementation of application-specific features in respective product portfolios, e.g.: Gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation. 

The 400 V CoolSiC™ MOSFETs were specially developed for use in the AC/DC stage of AI server PSUs and are also ideal for applications such as solar and energy storage systems. Our range of 650 V CoolSiC™ MOSFETs offer optimized switching behaviors at high currents and low capacitances and are designed for a variety of industrial applications including, servers, telecom, motor drives, and more.

The 750 V and 1200 V MOSFET range is available for both industrial and automotive-qualified applications, such as on-board charger/PFC, auxiliary inverters, and uninterruptible power supply (UPS). The selection of 1700 V CoolSiC™ MOSFET is offered with a flyback typology that can be used in energy storage systems, fast EV charging, power management (SMPS), and solutions for solar energy systems. Lastly, the 2000 V CoolSiC™ MOSFET offers increased power density and voltage margin, designated for high-voltage applications such as fast EV charging and solutions for solar energy systems.

Additional information about the silicon carbide MOSFET discretes

CoolSiC™ MOSFETs in discrete packages are ideally suited for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies, and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects creates a benchmark in low-dynamic loss, even at zero-volt turn-off voltage in bridge topologies. Our TO- and SMD offerings comes also with Kelvin-source pins for optimized switching performance.

We complete the SiC discrete offering with a range of selected driver IC products fulfilling the needs of the ultra-fast SiC MOSFET switching feature. Together, CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of SiC technology: Improved efficiency, space, and weight savings, part count reduction, and enhanced system reliability. 

More about gate driver ICs
Further information about the silicon carbide MOSFET discretes

CoolSiC™ MOSFETs in discrete housings come along with a fast internal freewheeling diode, thus making hard switching without additional diode chips possible. Due to its unipolar character, the MOSFETs show very low, temperature-independent switching and low conduction losses, especially under partial load conditions.

Our unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products from 400 V up to 2000 V are ideally suited for hard- and resonant-switching topologies such as LLC and ZVS and can be driven like an IGBT or CoolMOS™, using standard drivers. These robust devices offer superior gate oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses, highest transconductance level (gain), the threshold voltage of Vth = 4 V, and short-circuit robustness.

About the features, beneifts and advantages

The silicon carbide MOSFET discretes incorporate important key features like low device capacitances, temperature-independent switching losses, intrinsic diode with low reverse recovery charge, and threshold-free on-state characteristics.

The key benefits are the highest efficiency for reduced cooling effort, longer lifetime and higher reliability, higher frequency operation, reduction in system cost, increased power density, reduced system complexity, and ease of design and implementation.

There is also a list of advantages related to the silicon carbide MOSFET discretes, e.g., the superior gate oxide reliability, best-in-class switching and conduction losses, IGBT compatible driving (+18 V), threshold voltage (Vth > 4 V), and short-circuit and avalanche robustness.

About EiceDRIVER™ gate driver ICs for SiC MOSFETs

Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.

More about gate driver ICs

Introduction to CoolSiC™ MOSFET discretes

CoolSiC™ trench technology enables a flexible parameter set, which is used for the implementation of application-specific features in respective product portfolios, e.g.: Gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation. 

The 400 V CoolSiC™ MOSFETs were specially developed for use in the AC/DC stage of AI server PSUs and are also ideal for applications such as solar and energy storage systems. Our range of 650 V CoolSiC™ MOSFETs offer optimized switching behaviors at high currents and low capacitances and are designed for a variety of industrial applications including, servers, telecom, motor drives, and more.

The 750 V and 1200 V MOSFET range is available for both industrial and automotive-qualified applications, such as on-board charger/PFC, auxiliary inverters, and uninterruptible power supply (UPS). The selection of 1700 V CoolSiC™ MOSFET is offered with a flyback typology that can be used in energy storage systems, fast EV charging, power management (SMPS), and solutions for solar energy systems. Lastly, the 2000 V CoolSiC™ MOSFET offers increased power density and voltage margin, designated for high-voltage applications such as fast EV charging and solutions for solar energy systems.

Additional information about the silicon carbide MOSFET discretes

CoolSiC™ MOSFETs in discrete packages are ideally suited for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies, and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects creates a benchmark in low-dynamic loss, even at zero-volt turn-off voltage in bridge topologies. Our TO- and SMD offerings comes also with Kelvin-source pins for optimized switching performance.

We complete the SiC discrete offering with a range of selected driver IC products fulfilling the needs of the ultra-fast SiC MOSFET switching feature. Together, CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of SiC technology: Improved efficiency, space, and weight savings, part count reduction, and enhanced system reliability. 

More about gate driver ICs

Further information about the silicon carbide MOSFET discretes

CoolSiC™ MOSFETs in discrete housings come along with a fast internal freewheeling diode, thus making hard switching without additional diode chips possible. Due to its unipolar character, the MOSFETs show very low, temperature-independent switching and low conduction losses, especially under partial load conditions.

Our unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products from 400 V up to 2000 V are ideally suited for hard- and resonant-switching topologies such as LLC and ZVS and can be driven like an IGBT or CoolMOS™, using standard drivers. These robust devices offer superior gate oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses, highest transconductance level (gain), the threshold voltage of Vth = 4 V, and short-circuit robustness.

About the features, beneifts and advantages

The silicon carbide MOSFET discretes incorporate important key features like low device capacitances, temperature-independent switching losses, intrinsic diode with low reverse recovery charge, and threshold-free on-state characteristics.

The key benefits are the highest efficiency for reduced cooling effort, longer lifetime and higher reliability, higher frequency operation, reduction in system cost, increased power density, reduced system complexity, and ease of design and implementation.

There is also a list of advantages related to the silicon carbide MOSFET discretes, e.g., the superior gate oxide reliability, best-in-class switching and conduction losses, IGBT compatible driving (+18 V), threshold voltage (Vth > 4 V), and short-circuit and avalanche robustness.

About EiceDRIVER™ gate driver ICs for SiC MOSFETs

Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.

More about gate driver ICs

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