DF120R12W2H3_B27 1200 V, 120 A booster IGBT module
Overview
EasyPACK™ 2B 1200 V, 120 A booster IGBT module with PressFIT contact technology and High Speed IGBT H3.
Summary of Features
- Low switching losses
- Fast silicon diode 1200 V
- Al2O3 substrate with low thermal resistance
- Integrated NTC temperature sensor
- PressFIT contact technology
Benefits
- Compact module concept
- Optimized customer’s development cycle time and cost
- Configuration flexibility
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